number: db-066 june 2008 / d page 1 semiconductor tak cheong ? 500 mw quadro mini-melf hermetically sealed glass zener voltage regulators absolute maximum ratings t a = 25c unless otherwise noted parameter value units power dissipation 500 mw storage temperature range -65 to +175 c operating junction temperature +175 c these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: zener voltage range 2.0 to 75 volts quadro mini-melf package surface device type mounting hermetically sealed glass compression bonded construction all external surfaces are corrosion resistant and termianls are readily solderable rohs compliant matte tin (sn) terminal finish color band indicates negative polarity electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ) max i zk (ma) z zk @ i zk ( ) max i r @ v r ( a) max v r (volts) tcbzt55c 2v0 1.88 2.11 5 100 1 600 100 1 tcbzt55c 2v2 2.08 2.33 5 100 1 600 100 1 tcbzt55c 2v4 2.28 2.56 5 85 1 600 50 1 tcbzt55c 2v7 2.51 2.89 5 85 1 600 10 1 tcbzt55c 3v0 2.8 3.2 5 85 1 600 4 1 tcbzt55c 3v3 3.1 3.5 5 85 1 600 2 1 tcbzt55c 3v6 3.4 3.8 5 85 1 600 2 1 tcbzt55c 3v9 3.7 4.1 5 85 1 600 2 1 tcbzt55c 4v3 4 4.6 5 75 1 600 1 1 tcbzt55c 4v7 4.4 5 5 60 1 600 0.5 1 tcbzt55c 5v1 4.8 5.4 5 35 1 550 0.1 1 tcbzt55c 5v6 5.2 6 5 25 1 450 0.1 1 tcbzt55c 6v2 5.8 6.6 5 10 1 200 0.1 2 tcbzt55c 6v8 6.4 7.2 5 8 1 150 0.1 3 tcbzt55c 7v5 7 7.9 5 7 1 50 0.1 5 tcbzt55c 8v2 7.7 8.7 5 7 1 50 0.1 6.2 tcbzt55c 9v1 8.5 9.6 5 10 1 50 0.1 6.8 tcbzt55c 10 9.4 10.6 5 15 1 70 0.1 7.5 tcbzt55c 11 10.4 11.6 5 20 1 70 0.1 8.2 tcbzt55c 12 11.4 12.7 5 20 1 90 0.1 9.1 tcbzt55c 13 12.4 14.1 5 26 1 110 0.1 10 cathode anode electrical symbol cathode band color: blue tcbzt55c2v0 through tcbzt55c75 tcbzt55b2v0 through tcbzt55b75
number: db-066 june 2008 / d page 2 semiconductor tak cheong ? electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ) max i zk (ma) z zk @ i zk ( ) max i r @ v r ( a) max v r (volts) tcbzt55c 15 13.8 15.6 5 30 1 110 0.1 11 tcbzt55c 16 15.3 17.1 5 40 1 170 0.1 12 tcbzt55c 18 16.8 19.1 5 50 1 170 0.1 13 tcbzt55c 20 18.8 21.1 5 55 1 220 0.1 15 tcbzt55c 22 20.8 23.3 5 55 1 220 0.1 16 tcbzt55c 24 22.8 25.6 5 80 1 220 0.1 18 tcbzt55c 27 25.1 28.9 5 80 1 220 0.1 20 tcbzt55c 30 28 32 5 80 1 220 0.1 22 tcbzt55c 33 31 35 5 80 1 220 0.1 24 tcbzt55c 36 34 38 5 80 1 220 0.1 27 tcbzt55c 39 37 41 2.5 90 0.5 500 0.1 28 tcbzt55c 43 40 46 2.5 90 0.5 600 0.1 32 tcbzt55c 47 44 50 2.5 110 0.5 700 0.1 35 tcbzt55c 51 48 54 2.5 125 0.5 700 0.1 38 tcbzt55c 56 52 60 2.5 135 0.5 1000 0.1 42 tcbzt55c 62 58 66 2.5 150 0.5 1000 0.1 47 tcbzt55c 68 64 72 2.5 160 0.5 1000 0.1 51 tcbzt55c 75 70 79 2.5 170 0.5 1000 0.1 56 v f forward voltage = 1.0 v maximum @ i f = 100 ma for all types v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ) max i zk (ma) z zk @ i zk ( ) max i r @ v r ( a) max v r (volts) tcbzt55b 2v4 2.35 2.45 5 85 1 600 50 1 tcbzt55b 2v7 2.65 2.75 5 85 1 600 10 1 tcbzt55b 3v0 2.94 3.06 5 85 1 600 4 1 tcbzt55b 3v3 3.23 3.37 5 85 1 600 2 1 tcbzt55b 3v6 3.53 3.67 5 85 1 600 2 1 tcbzt55b 3v9 3.82 3.98 5 85 1 600 2 1 tcbzt55b 4v3 4.21 4.39 5 75 1 600 1 1 tcbzt55b 4v7 4.61 4.79 5 60 1 600 0.5 1 tcbzt55b 5v1 5.00 5.20 5 35 1 550 0.1 1 tcbzt55b 5v6 5.49 5.71 5 25 1 450 0.1 1 tcbzt55b 6v2 6.08 6.32 5 10 1 200 0.1 2 tcbzt55b 6v8 6.66 6.94 5 8 1 150 0.1 3 tcbzt55b 7v5 7.33 7.63 5 7 1 50 0.1 5 tcbzt55b 8v2 8.04 8.36 5 7 1 50 0.1 6.2 tcbzt55b 9v1 8.92 9.28 5 10 1 50 0.1 6.8 tcbzt55b 10 9.80 10.20 5 15 1 70 0.1 7.5 tcbzt55b 11 10.78 11.22 5 20 1 70 0.1 8.2 tcbzt55b 12 11.76 12.24 5 20 1 90 0.1 9.1 tcbzt55b 13 12.74 13.26 5 26 1 110 0.1 10 tcbzt55b 15 14.70 15.30 5 30 1 110 0.1 11 tcbzt55b 16 15.68 16.32 5 40 1 170 0.1 12 tcbzt55b 18 17.64 18.36 5 50 1 170 0.1 13 tcbzt55b 20 19.60 20.40 5 55 1 220 0.1 15 tcbzt55b 22 21.56 22.44 5 55 1 220 0.1 16 tcbzt55b 24 23.52 24.48 5 80 1 220 0.1 18 tcbzt55b 27 26.46 27.54 5 80 1 220 0.1 20 tcbzt55b 30 29.40 30.60 5 80 1 220 0.1 22 tcbzt55b 33 32.34 33.66 5 80 1 220 0.1 24 tcbzt55b 36 35.28 36.72 5 80 1 220 0.1 27 tcbzt55b 39 38.22 39.78 2.5 90 0.5 500 0.1 28 tcbzt55b 43 42.14 43.86 2.5 90 0.5 600 0.1 32
number: db-066 june 2008 / d page 3 semiconductor tak cheong ? electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type min max i zt (ma) z zt @ i zt ( ) max i zk (ma) z zk @ i zk ( ) max i r @ v r ( a) max v r (volts) tcbzt55b 47 46.06 47.94 2.5 110 0.5 700 0.1 35 tcbzt55b 51 49.98 52.02 2.5 125 0.5 700 0.1 38 tcbzt55b 56 54.88 57.12 2.5 135 0.5 1000 0.1 42 tcbzt55b 62 60.76 63.24 2.5 150 0.5 1000 0.1 47 tcbzt55b 68 66.64 69.36 2.5 160 0.5 1000 0.1 51 tcbzt55b 75 73.50 76.50 2.5 170 0.5 1000 0.1 56 v f forward voltage = 1.0 v maximum @ i f = 100 ma for all types notes: 1. the type numbers listed have zener voltage min/max limits as shown. 2. for detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighte r voltage tolerances, contact your nearest tak cheong electronics representative. 3. the zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current ( i zt or i zk ) is superimposed to i zt or i zk.
number: db-066 june 2008 / d page 4 semiconductor tak cheong ? typical characteristics 0 100 200 300 400 500 600 0 40 80 120 160 200 temperature [ ] pd-power passipation [mw] ta = 25 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 vf - forw ard voltage [mv] forward current [ma] pd = 500mw ta = 25 0 50 100 150 200 250 300 0246810 vz - reverse voltage [v] reverse current [ma] pd = 500mw ta = 25 0.01 0.1 1 10 100 15 25 35 45 55 65 75 vz - reverse voltage [v] reverse current [ma] f = 1mhz ta = 25 1 10 100 1000 0 20406080 vz - reverse voltage [v] total capacitance [pf] vr = 0v vr = 2v vr = 5v vr = 20v vr = 30v ta = 25 0.1 1 10 100 1000 110100 vz - reverse voltage [v] differential zener impedance [ ? ] iz=10ma iz=5ma iz=2ma iz=1ma figure 1. power dissipation vs ambient temperature valid provided leads at a distance of 0.8mm from case are kept at ambient temperature figure 2. total capacitance figure 5. reverse current vs. reverse voltage figure 6. reverse current vs. reverse voltage figure 3. differential impedance vs. zener voltage figure 4. forward current vs. forward voltage
number: db-066 june 2008 / d page 5 semiconductor tak cheong ? package outline case outline quadro (mini-melf) millimeters inches dim min max min max a 3.30 3.70 0.130 0.146 b 1.40 1.60 0.055 0.063 c 0.25 0.40 0.010 0.016 d typical 1.8 typical 0.071 notes: 1. jedec do-213 2. polarity denoted by a band. b c a d >r3 (r 0.12)
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